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Yangzhou Yangjie Elec Tech YJD212080NCTG1
| Manufacturer | |
| Mfr. Part # | YJD212080NCTG1 |
| EBEE Part # | E820605692 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>25 In Stock for Fast Shipping
25 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.5218 | $ 6.5218 |
| 10+ | $5.6604 | $ 56.6040 |
| 30+ | $5.1367 | $ 154.1010 |
| 90+ | $4.6965 | $ 422.6850 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Yangzhou Yangjie Elec Tech YJD212080NCTG1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 80mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Pd - Power Dissipation | 220W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 38A | |
| Ciss-Input Capacitance | 890pF | |
| Output Capacitance(Coss) | 58pF | |
| Gate Charge(Qg) | 41nC |
Shopping Guide
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25 Stock for Shipping Fast
25 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.5218 | $ 6.5218 |
| 10+ | $5.6604 | $ 56.6040 |
| 30+ | $5.1367 | $ 154.1010 |
| 90+ | $4.6965 | $ 422.6850 |
Best price for more quantity?
$
