| Manufacturer | |
| Mfr. Part # | KXMW120R80T3 |
| EBEE Part # | E820607110 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.0573 | $ 7.0573 |
| 10+ | $6.1859 | $ 61.8590 |
| 30+ | $5.6550 | $ 169.6500 |
| 90+ | $5.2093 | $ 468.8370 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Power X KXMW120R80T3 | |
| RoHS | ||
| Power Dissipation | 251W | |
| Continuous Drain Current | 49A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.0573 | $ 7.0573 |
| 10+ | $6.1859 | $ 61.8590 |
| 30+ | $5.6550 | $ 169.6500 |
| 90+ | $5.2093 | $ 468.8370 |
