| Manufacturer | |
| Mfr. Part # | NTH4L045N065SC1 |
| EBEE Part # | E82902168 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $15.2467 | $ 15.2467 |
| 10+ | $14.6025 | $ 146.0250 |
| 30+ | $13.4879 | $ 404.6370 |
| 90+ | $12.5144 | $ 1126.2960 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NTH4L045N065SC1 | |
| RoHS | ||
| Power Dissipation | 187W | |
| Continuous Drain Current | 55A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 650V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $15.2467 | $ 15.2467 |
| 10+ | $14.6025 | $ 146.0250 |
| 30+ | $13.4879 | $ 404.6370 |
| 90+ | $12.5144 | $ 1126.2960 |
