| Manufacturer | |
| Mfr. Part # | CI7N170SM |
| EBEE Part # | E82842690 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5003 | $ 3.5003 |
| 10+ | $3.0571 | $ 30.5710 |
| 30+ | $2.0475 | $ 61.4250 |
| 90+ | $1.7652 | $ 158.8680 |
| 510+ | $1.6358 | $ 834.2580 |
| 1020+ | $1.5806 | $ 1612.2120 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI7N170SM | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 850mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Pd - Power Dissipation | 62W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 194pF | |
| Output Capacitance(Coss) | 13pF | |
| Gate Charge(Qg) | 23nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5003 | $ 3.5003 |
| 10+ | $3.0571 | $ 30.5710 |
| 30+ | $2.0475 | $ 61.4250 |
| 90+ | $1.7652 | $ 158.8680 |
| 510+ | $1.6358 | $ 834.2580 |
| 1020+ | $1.5806 | $ 1612.2120 |
