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SUPSiC GC3M0060065K
| Manufacturer | |
| Mfr. Part # | GC3M0060065K |
| EBEE Part # | E87435031 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>255 In Stock for Fast Shipping
255 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2604 | $ 5.2604 |
| 10+ | $4.5566 | $ 45.5660 |
| 30+ | $3.8512 | $ 115.5360 |
| 90+ | $3.4286 | $ 308.5740 |
| 600+ | $3.2347 | $ 1940.8200 |
| 900+ | $3.1458 | $ 2831.2200 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0060065K | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 60mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 37A | |
| Ciss-Input Capacitance | 1.02nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 46nC |
Shopping Guide
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255 Stock for Shipping Fast
255 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2604 | $ 5.2604 |
| 10+ | $4.5566 | $ 45.5660 |
| 30+ | $3.8512 | $ 115.5360 |
| 90+ | $3.4286 | $ 308.5740 |
| 600+ | $3.2347 | $ 1940.8200 |
| 900+ | $3.1458 | $ 2831.2200 |
Best price for more quantity?
$
