| Manufacturer | |
| Mfr. Part # | IV1Q12050T4 |
| EBEE Part # | E82924638 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.4145 | $ 18.4145 |
| 10+ | $17.2532 | $ 172.5320 |
| 30+ | $15.9944 | $ 479.8320 |
| 90+ | $14.8963 | $ 1340.6670 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12050T4 | |
| RoHS | ||
| Power Dissipation | 344W | |
| Continuous Drain Current | 58A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.4145 | $ 18.4145 |
| 10+ | $17.2532 | $ 172.5320 |
| 30+ | $15.9944 | $ 479.8320 |
| 90+ | $14.8963 | $ 1340.6670 |
