| Manufacturer | |
| Mfr. Part # | C3M0120090D |
| EBEE Part # | E85713506 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.2175 | $ 12.2175 |
| 10+ | $10.7204 | $ 107.2040 |
| 30+ | $9.8070 | $ 294.2100 |
| 90+ | $9.0421 | $ 813.7890 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Wolfspeed C3M0120090D | |
| RoHS | ||
| Power Dissipation | 97W | |
| Continuous Drain Current | 23A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 900V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.2175 | $ 12.2175 |
| 10+ | $10.7204 | $ 107.2040 |
| 30+ | $9.8070 | $ 294.2100 |
| 90+ | $9.0421 | $ 813.7890 |
