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Tokmas CI90N120SM4


Manufacturer
Mfr. Part #
CI90N120SM4
EBEE Part #
E85364637
Package
TO-247-4
Customer #
Datasheet
EDA Models
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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2 In Stock for Fast Shipping
2 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$7.7868$ 7.7868
10+$6.6709$ 66.7090
30+$5.9905$ 179.7150
90+$5.4190$ 487.7100
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetTokmas CI90N120SM4
RoHS
RDS(on)38mΩ
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)42.8pF
Pd - Power Dissipation463W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))4V
Current - Continuous Drain(Id)90A
Ciss-Input Capacitance4.7nF
Output Capacitance(Coss)231pF
Gate Charge(Qg)185nC

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