| Manufacturer | |
| Mfr. Part # | GC3M0016120D |
| EBEE Part # | E87435039 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.9956 | $ 16.9956 |
| 10+ | $16.2766 | $ 162.7660 |
| 30+ | $15.0325 | $ 450.9750 |
| 90+ | $13.9457 | $ 1255.1130 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0016120D | |
| RoHS | ||
| Power Dissipation | 556W | |
| Total Gate Charge | 207nC | |
| Continuous Drain Current | 115A | |
| Reverse Transfer Capacitance | 13pF | |
| Input Capacitance | 6085pF | |
| Output Capacitance | 230pF | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | 16mΩ | |
| Vgs(th) | 2.5V | |
| V(BR)DSS | 1200V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.9956 | $ 16.9956 |
| 10+ | $16.2766 | $ 162.7660 |
| 30+ | $15.0325 | $ 450.9750 |
| 90+ | $13.9457 | $ 1255.1130 |
