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SUPSiC GC3M0016120D


Manufacturer
Mfr. Part #
GC3M0016120D
EBEE Part #
E87435039
Package
TO247-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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In Stock: 32
Minimum: 1Multiples: 1
Unit Price
$ 16.9956
Ext. Price
$ 16.9956
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$16.9956$ 16.9956
10+$16.2766$ 162.7660
30+$15.0325$ 450.9750
90+$13.9457$ 1255.1130
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSUPSiC GC3M0016120D
RoHS
Power Dissipation556W
Total Gate Charge207nC
Continuous Drain Current115A
Reverse Transfer Capacitance13pF
Input Capacitance6085pF
Output Capacitance230pF
Channel Type1 N-Channel
Drain-Source On-State Resistance(15V)16mΩ
Vgs(th)2.5V
V(BR)DSS1200V

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