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SUPSiC GC3M0016120D
| Manufacturer | |
| Mfr. Part # | GC3M0016120D |
| EBEE Part # | E87435039 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>108 In Stock for Fast Shipping
108 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.7187 | $ 17.7187 |
| 10+ | $16.2961 | $ 162.9610 |
| 30+ | $14.9879 | $ 449.6370 |
| 90+ | $13.8447 | $ 1246.0230 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0016120D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 16mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| Pd - Power Dissipation | 556W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 115A | |
| Ciss-Input Capacitance | 6.085nF | |
| Output Capacitance(Coss) | 230pF | |
| Gate Charge(Qg) | 207nC |
Shopping Guide
Expand
108 Stock for Shipping Fast
108 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.7187 | $ 17.7187 |
| 10+ | $16.2961 | $ 162.9610 |
| 30+ | $14.9879 | $ 449.6370 |
| 90+ | $13.8447 | $ 1246.0230 |
Best price for more quantity?
$
