| Manufacturer | |
| Mfr. Part # | YJD212040NCFG2 |
| EBEE Part # | E820605668 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.6170 | $ 9.6170 |
| 10+ | $8.3486 | $ 83.4860 |
| 30+ | $7.5756 | $ 227.2680 |
| 90+ | $6.9288 | $ 623.5920 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Yangzhou Yangjie Elec Tech YJD212040NCFG2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 44mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.2pF | |
| Pd - Power Dissipation | 333W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 66A | |
| Ciss-Input Capacitance | 3.456nF | |
| Output Capacitance(Coss) | 127pF | |
| Gate Charge(Qg) | 116nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.6170 | $ 9.6170 |
| 10+ | $8.3486 | $ 83.4860 |
| 30+ | $7.5756 | $ 227.2680 |
| 90+ | $6.9288 | $ 623.5920 |
