| Manufacturer | |
| Mfr. Part # | CI60N120SM5(TOKMAS) |
| EBEE Part # | E821547659 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9649 | $ 3.9649 |
| 10+ | $3.4030 | $ 34.0300 |
| 30+ | $2.9795 | $ 89.3850 |
| 90+ | $2.6417 | $ 237.7530 |
| 510+ | $2.4861 | $ 1267.9110 |
| 1020+ | $2.4160 | $ 2464.3200 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI60N120SM5(TOKMAS) | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 60mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.6pF | |
| Pd - Power Dissipation | 312W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.9nF | |
| Output Capacitance(Coss) | 118pF | |
| Gate Charge(Qg) | 128nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9649 | $ 3.9649 |
| 10+ | $3.4030 | $ 34.0300 |
| 30+ | $2.9795 | $ 89.3850 |
| 90+ | $2.6417 | $ 237.7530 |
| 510+ | $2.4861 | $ 1267.9110 |
| 1020+ | $2.4160 | $ 2464.3200 |
