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Tokmas CI60N120SM4
| Manufacturer | |
| Mfr. Part # | CI60N120SM4 |
| EBEE Part # | E82980704 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>371 In Stock for Fast Shipping
371 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.1436 | $ 7.1436 |
| 10+ | $6.3092 | $ 63.0920 |
| 30+ | $5.4948 | $ 164.8440 |
| 90+ | $5.0676 | $ 456.0840 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI60N120SM4 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Power Dissipation | 330W | |
| Total Gate Charge | 160nC | |
| Continuous Drain Current | 60A | |
| Reverse Transfer Capacitance | 29pF | |
| Input Capacitance | 3550pF | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 45ｍΩ | |
| Vgs(th) | 2.5V | |
| Encapsulated Type | Single Tube | |
| V(BR)DSS | 1200V | |
| Drain-Source On-State Resistance(10V) | - |
Shopping Guide
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371 Stock for Shipping Fast
371 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.1436 | $ 7.1436 |
| 10+ | $6.3092 | $ 63.0920 |
| 30+ | $5.4948 | $ 164.8440 |
| 90+ | $5.0676 | $ 456.0840 |
Best price for more quantity?
$
