| Manufacturer | |
| Mfr. Part # | CI40N65SM(TOKMAS) |
| EBEE Part # | E818214413 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1265 | $ 4.1265 |
| 10+ | $3.5692 | $ 35.6920 |
| 30+ | $3.1135 | $ 93.4050 |
| 90+ | $2.7785 | $ 250.0650 |
| 510+ | $2.6245 | $ 1338.4950 |
| 1020+ | $2.5546 | $ 2605.6920 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI40N65SM(TOKMAS) | |
| RoHS | ||
| RDS(on) | 65mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.1nF | |
| Output Capacitance(Coss) | 56pF | |
| Gate Charge(Qg) | 75nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1265 | $ 4.1265 |
| 10+ | $3.5692 | $ 35.6920 |
| 30+ | $3.1135 | $ 93.4050 |
| 90+ | $2.7785 | $ 250.0650 |
| 510+ | $2.6245 | $ 1338.4950 |
| 1020+ | $2.5546 | $ 2605.6920 |
