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Tokmas CI30N65SM
| Manufacturer | |
| Mfr. Part # | CI30N65SM |
| EBEE Part # | E83010930 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>44 In Stock for Fast Shipping
44 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8534 | $ 3.8534 |
| 10+ | $3.3088 | $ 33.0880 |
| 30+ | $3.0786 | $ 92.3580 |
| 90+ | $2.7499 | $ 247.4910 |
| 510+ | $2.5991 | $ 1325.5410 |
| 1020+ | $2.5308 | $ 2581.4160 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI30N65SM | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 65mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| Pd - Power Dissipation | 171W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.7nF | |
| Gate Charge(Qg) | 65nC |
Shopping Guide
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44 Stock for Shipping Fast
44 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8534 | $ 3.8534 |
| 10+ | $3.3088 | $ 33.0880 |
| 30+ | $3.0786 | $ 92.3580 |
| 90+ | $2.7499 | $ 247.4910 |
| 510+ | $2.5991 | $ 1325.5410 |
| 1020+ | $2.5308 | $ 2581.4160 |
Best price for more quantity?
$
