| Manufacturer | |
| Mfr. Part # | CI30N120M4(TOKMAS) |
| EBEE Part # | E821547658 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7509 | $ 2.7509 |
| 10+ | $2.3409 | $ 23.4090 |
| 30+ | $2.0005 | $ 60.0150 |
| 90+ | $1.7375 | $ 156.3750 |
| 510+ | $1.6184 | $ 825.3840 |
| 1020+ | $1.5673 | $ 1598.6460 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Tokmas CI30N120M4(TOKMAS) | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 96mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.1nF | |
| Output Capacitance(Coss) | 56pF | |
| Gate Charge(Qg) | 75nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7509 | $ 2.7509 |
| 10+ | $2.3409 | $ 23.4090 |
| 30+ | $2.0005 | $ 60.0150 |
| 90+ | $1.7375 | $ 156.3750 |
| 510+ | $1.6184 | $ 825.3840 |
| 1020+ | $1.5673 | $ 1598.6460 |
