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Tokmas CI30N120M4(TOKMAS)


Manufacturer
Mfr. Part #
CI30N120M4(TOKMAS)
EBEE Part #
E821547658
Package
TO-247-4
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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131 In Stock for Fast Shipping
131 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.7509$ 2.7509
10+$2.3409$ 23.4090
30+$2.0005$ 60.0150
90+$1.7375$ 156.3750
510+$1.6184$ 825.3840
1020+$1.5673$ 1598.6460
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetTokmas CI30N120M4(TOKMAS)
RoHS
TypeN-Channel
RDS(on)96mΩ
Reverse Transfer Capacitance (Crss@Vds)15pF
Pd - Power Dissipation150W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))4.5V
Current - Continuous Drain(Id)30A
Ciss-Input Capacitance1.1nF
Output Capacitance(Coss)56pF
Gate Charge(Qg)75nC

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