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SUPSiC GC3M0120090D
| Manufacturer | |
| Mfr. Part # | GC3M0120090D |
| EBEE Part # | E87435035 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>150 In Stock for Fast Shipping
150 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6573 | $ 5.6573 |
| 10+ | $4.8930 | $ 48.9300 |
| 30+ | $4.4389 | $ 133.1670 |
| 90+ | $3.9799 | $ 358.1910 |
| 600+ | $3.7695 | $ 2261.7000 |
| 900+ | $3.6729 | $ 3305.6100 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0120090D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 120mΩ@15V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Pd - Power Dissipation | 97W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Current - Continuous Drain(Id) | 23A | |
| Ciss-Input Capacitance | 414pF | |
| Output Capacitance(Coss) | 48pF | |
| Gate Charge(Qg) | 21nC |
Shopping Guide
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150 Stock for Shipping Fast
150 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6573 | $ 5.6573 |
| 10+ | $4.8930 | $ 48.9300 |
| 30+ | $4.4389 | $ 133.1670 |
| 90+ | $3.9799 | $ 358.1910 |
| 600+ | $3.7695 | $ 2261.7000 |
| 900+ | $3.6729 | $ 3305.6100 |
Best price for more quantity?
$
