Recommonended For You
Images are for reference only
Add to Favourites
SUPSiC GC3M0075120D
| Manufacturer | |
| Mfr. Part # | GC3M0075120D |
| EBEE Part # | E87435045 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>150 In Stock for Fast Shipping
150 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6686 | $ 5.6686 |
| 10+ | $4.8451 | $ 48.4510 |
| 30+ | $4.1701 | $ 125.1030 |
| 90+ | $3.6753 | $ 330.7770 |
| 600+ | $3.4471 | $ 2068.2600 |
| 900+ | $3.3434 | $ 3009.0600 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0075120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 75mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 32A | |
| Ciss-Input Capacitance | 1.39nF | |
| Output Capacitance(Coss) | 58pF | |
| Gate Charge(Qg) | 54nC |
Shopping Guide
Expand
150 Stock for Shipping Fast
150 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6686 | $ 5.6686 |
| 10+ | $4.8451 | $ 48.4510 |
| 30+ | $4.1701 | $ 125.1030 |
| 90+ | $3.6753 | $ 330.7770 |
| 600+ | $3.4471 | $ 2068.2600 |
| 900+ | $3.3434 | $ 3009.0600 |
Best price for more quantity?
$
