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SUPSiC GC3M0065090D


Manufacturer
Mfr. Part #
GC3M0065090D
EBEE Part #
E87435034
Package
TO247-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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194 In Stock for Fast Shipping
194 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$5.5290$ 5.5290
10+$4.7990$ 47.9900
30+$4.1654$ 124.9620
90+$3.7924$ 341.3160
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSUPSiC GC3M0065090D
RoHS
TypeN-Channel
Configuration-
RDS(on)65mΩ@15V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)5pF
Pd - Power Dissipation125W
Drain to Source Voltage900V
Gate Threshold Voltage (Vgs(th))2.1V
Current - Continuous Drain(Id)36A
Ciss-Input Capacitance760pF
Output Capacitance(Coss)66pF
Gate Charge(Qg)71nC

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