| Manufacturer | |
| Mfr. Part # | GC3M0065090D |
| EBEE Part # | E87435034 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.5290 | $ 5.5290 |
| 10+ | $4.7990 | $ 47.9900 |
| 30+ | $4.1654 | $ 124.9620 |
| 90+ | $3.7924 | $ 341.3160 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0065090D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 65mΩ@15V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 760pF | |
| Output Capacitance(Coss) | 66pF | |
| Gate Charge(Qg) | 71nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.5290 | $ 5.5290 |
| 10+ | $4.7990 | $ 47.9900 |
| 30+ | $4.1654 | $ 124.9620 |
| 90+ | $3.7924 | $ 341.3160 |
