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SUPSiC GC3M0040120D
| Manufacturer | |
| Mfr. Part # | GC3M0040120D |
| EBEE Part # | E87435043 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>213 In Stock for Fast Shipping
213 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.6550 | $ 10.6550 |
| 10+ | $9.3477 | $ 93.4770 |
| 30+ | $7.6436 | $ 229.3080 |
| 90+ | $6.9742 | $ 627.6780 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0040120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 40mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 326W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Current - Continuous Drain(Id) | 66A | |
| Ciss-Input Capacitance | 2.9nF | |
| Output Capacitance(Coss) | 103pF | |
| Gate Charge(Qg) | 101nC |
Shopping Guide
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213 Stock for Shipping Fast
213 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.6550 | $ 10.6550 |
| 10+ | $9.3477 | $ 93.4770 |
| 30+ | $7.6436 | $ 229.3080 |
| 90+ | $6.9742 | $ 627.6780 |
Best price for more quantity?
$
