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SUPSiC GC3M0032120K
| Manufacturer | |
| Mfr. Part # | GC3M0032120K |
| EBEE Part # | E87435053 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>225 In Stock for Fast Shipping
225 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.2380 | $ 8.2380 |
| 10+ | $6.8292 | $ 68.2920 |
| 30+ | $6.1474 | $ 184.4220 |
| 90+ | $5.5761 | $ 501.8490 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0032120K | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 32mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Pd - Power Dissipation | 283W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 63A | |
| Ciss-Input Capacitance | 3.357nF | |
| Output Capacitance(Coss) | 129pF | |
| Gate Charge(Qg) | 118nC |
Shopping Guide
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225 Stock for Shipping Fast
225 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.2380 | $ 8.2380 |
| 10+ | $6.8292 | $ 68.2920 |
| 30+ | $6.1474 | $ 184.4220 |
| 90+ | $5.5761 | $ 501.8490 |
Best price for more quantity?
$
