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SUPSiC GC3M0021120K
| Manufacturer | |
| Mfr. Part # | GC3M0021120K |
| EBEE Part # | E87435052 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>121 In Stock for Fast Shipping
121 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.2369 | $ 14.2369 |
| 10+ | $13.0794 | $ 130.7940 |
| 30+ | $12.0125 | $ 360.3750 |
| 90+ | $11.0821 | $ 997.3890 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0021120K | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 21mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Pd - Power Dissipation | 469W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.818nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 162nC |
Shopping Guide
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121 Stock for Shipping Fast
121 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.2369 | $ 14.2369 |
| 10+ | $13.0794 | $ 130.7940 |
| 30+ | $12.0125 | $ 360.3750 |
| 90+ | $11.0821 | $ 997.3890 |
Best price for more quantity?
$
