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SUPSiC GC3M0015065D
| Manufacturer | |
| Mfr. Part # | GC3M0015065D |
| EBEE Part # | E87435023 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>129 In Stock for Fast Shipping
129 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.5716 | $ 11.5716 |
| 10+ | $10.0454 | $ 100.4540 |
| 30+ | $8.9177 | $ 267.5310 |
| 90+ | $8.1365 | $ 732.2850 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC3M0015065D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 15mΩ@15V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| Pd - Power Dissipation | 416W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 5.011nF | |
| Output Capacitance(Coss) | 289pF | |
| Gate Charge(Qg) | 188nC |
Shopping Guide
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129 Stock for Shipping Fast
129 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.5716 | $ 11.5716 |
| 10+ | $10.0454 | $ 100.4540 |
| 30+ | $8.9177 | $ 267.5310 |
| 90+ | $8.1365 | $ 732.2850 |
Best price for more quantity?
$
