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SUPSiC GC2M0280120D
| Manufacturer | |
| Mfr. Part # | GC2M0280120D |
| EBEE Part # | E87435049 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>84 In Stock for Fast Shipping
84 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9196 | $ 3.9196 |
| 10+ | $3.7425 | $ 37.4250 |
| 30+ | $3.6331 | $ 108.9930 |
| 90+ | $3.5423 | $ 318.8070 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC2M0280120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 320mΩ@20V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Pd - Power Dissipation | 69.4W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 267pF | |
| Output Capacitance(Coss) | 31pF | |
| Gate Charge(Qg) | 19nC |
Shopping Guide
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84 Stock for Shipping Fast
84 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9196 | $ 3.9196 |
| 10+ | $3.7425 | $ 37.4250 |
| 30+ | $3.6331 | $ 108.9930 |
| 90+ | $3.5423 | $ 318.8070 |
Best price for more quantity?
$
