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SUPSiC GC2M0080120D
| Manufacturer | |
| Mfr. Part # | GC2M0080120D |
| EBEE Part # | E87435046 |
| Package | TO247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>1562 In Stock for Fast Shipping
1562 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.7980 | $ 3.7980 |
| 10+ | $3.6132 | $ 36.1320 |
| 30+ | $3.1482 | $ 94.4460 |
| 90+ | $3.0370 | $ 273.3300 |
| 600+ | $2.9868 | $ 1792.0800 |
| 900+ | $2.9634 | $ 2667.0600 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC2M0080120D | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Power Dissipation | 192W | |
| Total Gate Charge | 71nC | |
| Continuous Drain Current | 36A | |
| Reverse Transfer Capacitance | 7.5pF | |
| Input Capacitance | 1130pF | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 80mΩ | |
| Vgs(th) | 2.9V | |
| Encapsulated Type | - | |
| V(BR)DSS | 1200V | |
| Drain-Source On-State Resistance(10V) | - |
Shopping Guide
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1562 Stock for Shipping Fast
1562 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.7980 | $ 3.7980 |
| 10+ | $3.6132 | $ 36.1320 |
| 30+ | $3.1482 | $ 94.4460 |
| 90+ | $3.0370 | $ 273.3300 |
| 600+ | $2.9868 | $ 1792.0800 |
| 900+ | $2.9634 | $ 2667.0600 |
Best price for more quantity?
$
