| Manufacturer | |
| Mfr. Part # | GC2M0080120D1 |
| EBEE Part # | E819271983 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.1016 | $ 3.1016 |
| 10+ | $2.9328 | $ 29.3280 |
| 30+ | $2.8342 | $ 85.0260 |
| 90+ | $2.7318 | $ 245.8620 |
| 450+ | $2.6851 | $ 1208.2950 |
| 900+ | $2.6636 | $ 2397.2400 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC2M0080120D1 | |
| RoHS | ||
| Power Dissipation | 190W | |
| Continuous Drain Current | 34A | |
| Channel Type | 1 N-Channel | |
| V(BR)DSS | 1200V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.1016 | $ 3.1016 |
| 10+ | $2.9328 | $ 29.3280 |
| 30+ | $2.8342 | $ 85.0260 |
| 90+ | $2.7318 | $ 245.8620 |
| 450+ | $2.6851 | $ 1208.2950 |
| 900+ | $2.6636 | $ 2397.2400 |
