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SUPSiC GC2M0080120D1


Manufacturer
Mfr. Part #
GC2M0080120D1
EBEE Part #
E819271983
Package
TO-247-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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716 In Stock for Fast Shipping
716 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.1016$ 3.1016
10+$2.9328$ 29.3280
30+$2.8342$ 85.0260
90+$2.7318$ 245.8620
450+$2.6851$ 1208.2950
900+$2.6636$ 2397.2400
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSUPSiC GC2M0080120D1
RoHS
Power Dissipation190W
Continuous Drain Current34A
Channel Type1 N-Channel
V(BR)DSS1200V

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