| Manufacturer | |
| Mfr. Part # | GC2M0040120D |
| EBEE Part # | E87435044 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.8782 | $ 7.8782 |
| 10+ | $6.9827 | $ 69.8270 |
| 30+ | $5.8174 | $ 174.5220 |
| 90+ | $5.3601 | $ 482.4090 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | SUPSiC GC2M0040120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 80mΩ@20V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Pd - Power Dissipation | 278W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 2.44nF | |
| Output Capacitance(Coss) | 171pF | |
| Gate Charge(Qg) | 120nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.8782 | $ 7.8782 |
| 10+ | $6.9827 | $ 69.8270 |
| 30+ | $5.8174 | $ 174.5220 |
| 90+ | $5.3601 | $ 482.4090 |
