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SUPSiC GC2M0040120D


Manufacturer
Mfr. Part #
GC2M0040120D
EBEE Part #
E87435044
Package
TO-247-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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286 In Stock for Fast Shipping
286 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$7.8782$ 7.8782
10+$6.9827$ 69.8270
30+$5.8174$ 174.5220
90+$5.3601$ 482.4090
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSUPSiC GC2M0040120D
RoHS
TypeN-Channel
Configuration-
RDS(on)80mΩ@20V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)11pF
Pd - Power Dissipation278W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))3.2V
Current - Continuous Drain(Id)55A
Ciss-Input Capacitance2.44nF
Output Capacitance(Coss)171pF
Gate Charge(Qg)120nC

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