Recommonended For You
Images are for reference only
Add to Favourites
STMicroelectronics SCTWA90N65G2V-4
| Manufacturer | |
| Mfr. Part # | SCTWA90N65G2V-4 |
| EBEE Part # | E83281049 |
| Package | HiP247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>1 In Stock for Fast Shipping
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $35.8544 | $ 35.8544 |
| 3+ | $32.4481 | $ 97.3443 |
| 30+ | $30.8790 | $ 926.3700 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTWA90N65G2V-4 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 24mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| Pd - Power Dissipation | 565W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 119A | |
| Ciss-Input Capacitance | 3.38nF | |
| Output Capacitance(Coss) | 294pF | |
| Gate Charge(Qg) | 157nC |
Shopping Guide
Expand
1 Stock for Shipping Fast
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $35.8544 | $ 35.8544 |
| 3+ | $32.4481 | $ 97.3443 |
| 30+ | $30.8790 | $ 926.3700 |
Best price for more quantity?
$
