| Manufacturer | |
| Mfr. Part # | SCTWA60N120G2-4 |
| EBEE Part # | E83281096 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $33.8274 | $ 33.8274 |
| 3+ | $30.5220 | $ 91.5660 |
| 30+ | $29.2499 | $ 877.4970 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTWA60N120G2-4 | |
| RoHS | ||
| Power Dissipation | 388W | |
| Continuous Drain Current | 60A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $33.8274 | $ 33.8274 |
| 3+ | $30.5220 | $ 91.5660 |
| 30+ | $29.2499 | $ 877.4970 |
