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STMicroelectronics SCTWA40N120G2V-4
| Manufacturer | |
| Mfr. Part # | SCTWA40N120G2V-4 |
| EBEE Part # | E85268807 |
| Package | HiP-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>30 In Stock for Fast Shipping
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.1942 | $ 16.1942 |
| 10+ | $15.4330 | $ 154.3300 |
| 30+ | $14.1145 | $ 423.4350 |
| 90+ | $12.9657 | $ 1166.9130 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTWA40N120G2V-4 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 100mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 277W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.45V | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 1.233nF | |
| Output Capacitance(Coss) | 56pF | |
| Gate Charge(Qg) | 61nC |
Shopping Guide
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30 Stock for Shipping Fast
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.1942 | $ 16.1942 |
| 10+ | $15.4330 | $ 154.3300 |
| 30+ | $14.1145 | $ 423.4350 |
| 90+ | $12.9657 | $ 1166.9130 |
Best price for more quantity?
$
