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STMicroelectronics SCTWA35N65G2V
| Manufacturer | |
| Mfr. Part # | SCTWA35N65G2V |
| EBEE Part # | E83281008 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>6 In Stock for Fast Shipping
6 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $15.2855 | $ 15.2855 |
| 10+ | $14.6019 | $ 146.0190 |
| 30+ | $13.4207 | $ 402.6210 |
| 100+ | $12.3890 | $ 1238.9000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTWA35N65G2V | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 67mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Pd - Power Dissipation | 208W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 1.37nF | |
| Gate Charge(Qg) | 73nC |
Shopping Guide
Expand
6 Stock for Shipping Fast
6 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $15.2855 | $ 15.2855 |
| 10+ | $14.6019 | $ 146.0190 |
| 30+ | $13.4207 | $ 402.6210 |
| 100+ | $12.3890 | $ 1238.9000 |
Best price for more quantity?
$
