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STMicroelectronics SCTWA30N120


Manufacturer
Mfr. Part #
SCTWA30N120
EBEE Part #
E8472656
Package
HiP-247
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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3 In Stock for Fast Shipping
3 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$22.2494$ 22.2494
30+$21.2189$ 636.5670
90+$20.9610$ 1886.4900
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSTMicroelectronics SCTWA30N120
RoHS
RDS(on)100mΩ
Operating Temperature --55℃~+200℃
Reverse Transfer Capacitance (Crss@Vds)25pF
Pd - Power Dissipation270W
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)45A
Ciss-Input Capacitance1.7nF
Output Capacitance(Coss)130pF
Gate Charge(Qg)105nC

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