36% off
| Manufacturer | |
| Mfr. Part # | SCTWA30N120 |
| EBEE Part # | E8472656 |
| Package | HiP-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.2494 | $ 22.2494 |
| 30+ | $21.2189 | $ 636.5670 |
| 90+ | $20.9610 | $ 1886.4900 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTWA30N120 | |
| RoHS | ||
| RDS(on) | 100mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Pd - Power Dissipation | 270W | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 1.7nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 105nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.2494 | $ 22.2494 |
| 30+ | $21.2189 | $ 636.5670 |
| 90+ | $20.9610 | $ 1886.4900 |
