| Manufacturer | |
| Mfr. Part # | SCTW70N120G2V |
| EBEE Part # | E83281068 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $30.6841 | $ 30.6841 |
| 30+ | $29.0551 | $ 871.6530 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTW70N120G2V | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 30mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| Pd - Power Dissipation | 547W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Current - Continuous Drain(Id) | 91A | |
| Ciss-Input Capacitance | 3.54nF | |
| Output Capacitance(Coss) | 176pF | |
| Gate Charge(Qg) | 150nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $30.6841 | $ 30.6841 |
| 30+ | $29.0551 | $ 871.6530 |
