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STMicroelectronics SCTW60N120G2
| Manufacturer | |
| Mfr. Part # | SCTW60N120G2 |
| EBEE Part # | E85268796 |
| Package | HiP-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $26.3568 | $ 26.3568 |
| 30+ | $25.1367 | $ 754.1010 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTW60N120G2 | |
| RoHS | ||
| RDS(on) | 52mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Pd - Power Dissipation | 389W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 1.969nF | |
| Output Capacitance(Coss) | 113pF | |
| Gate Charge(Qg) | 94nC |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $26.3568 | $ 26.3568 |
| 30+ | $25.1367 | $ 754.1010 |
