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STMicroelectronics SCTW40N120G2VAG
| Manufacturer | |
| Mfr. Part # | SCTW40N120G2VAG |
| EBEE Part # | E8472655 |
| Package | HiP-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>1 In Stock for Fast Shipping
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $23.8160 | $ 23.8160 |
| 10+ | $23.0969 | $ 230.9690 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTW40N120G2VAG | |
| RoHS | ||
| RDS(on) | 105mΩ | |
| Operating Temperature - | -55℃~+200℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Pd - Power Dissipation | 290W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 1.23nF | |
| Output Capacitance(Coss) | 56pF | |
| Gate Charge(Qg) | 63nC |
Shopping Guide
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1 Stock for Shipping Fast
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $23.8160 | $ 23.8160 |
| 10+ | $23.0969 | $ 230.9690 |
Best price for more quantity?
$
