| Manufacturer | |
| Mfr. Part # | SCTW40N120G2V |
| EBEE Part # | E83281060 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.4251 | $ 22.4251 |
| 30+ | $21.4758 | $ 644.2740 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTW40N120G2V | |
| RoHS | ||
| Power Dissipation | 278W | |
| Continuous Drain Current | 36A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.4251 | $ 22.4251 |
| 30+ | $21.4758 | $ 644.2740 |
