| Manufacturer | |
| Mfr. Part # | SCTH35N65G2V-7AG |
| EBEE Part # | E83288435 |
| Package | H2PAK-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.9234 | $ 12.9234 |
| 30+ | $12.2744 | $ 368.2320 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTH35N65G2V-7AG | |
| RoHS | ||
| Type | N-Channel | |
| Pd - Power Dissipation | 208W | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 45A |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.9234 | $ 12.9234 |
| 30+ | $12.2744 | $ 368.2320 |
