| Manufacturer | |
| Mfr. Part # | SCTH35N65G2V-7 |
| EBEE Part # | E82970626 |
| Package | H2PAK-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.6529 | $ 11.6529 |
| 10+ | $11.1327 | $ 111.3270 |
| 30+ | $10.2315 | $ 306.9450 |
| 100+ | $9.4466 | $ 944.6600 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | STMicroelectronics SCTH35N65G2V-7 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 67mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Pd - Power Dissipation | 208W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 1.37nF | |
| Gate Charge(Qg) | 73nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.6529 | $ 11.6529 |
| 10+ | $11.1327 | $ 111.3270 |
| 30+ | $10.2315 | $ 306.9450 |
| 100+ | $9.4466 | $ 944.6600 |
