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STMicroelectronics SCTH35N65G2V-7


Manufacturer
Mfr. Part #
SCTH35N65G2V-7
EBEE Part #
E82970626
Package
H2PAK-7
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$11.6529$ 11.6529
10+$11.1327$ 111.3270
30+$10.2315$ 306.9450
100+$9.4466$ 944.6600
TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSTMicroelectronics SCTH35N65G2V-7
RoHS
TypeN-Channel
RDS(on)67mΩ
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)30pF
Pd - Power Dissipation208W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))5V
Current - Continuous Drain(Id)45A
Ciss-Input Capacitance1.37nF
Gate Charge(Qg)73nC

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