| Manufacturer | |
| Mfr. Part # | SL19N120A |
| EBEE Part # | E82760944 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6063 | $ 5.6063 |
| 10+ | $4.8746 | $ 48.7460 |
| 30+ | $4.0177 | $ 120.5310 |
| 90+ | $3.6435 | $ 327.9150 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Slkor(SLKORMICRO Elec.) SL19N120A | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 160mΩ@20V | |
| Operating Temperature - | -55℃~+175℃@(Tj) | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Pd - Power Dissipation | 134W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Current - Continuous Drain(Id) | 19A | |
| Ciss-Input Capacitance | 895pF | |
| Gate Charge(Qg) | 43nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6063 | $ 5.6063 |
| 10+ | $4.8746 | $ 48.7460 |
| 30+ | $4.0177 | $ 120.5310 |
| 90+ | $3.6435 | $ 327.9150 |
