5% off
| Manufacturer | |
| Mfr. Part # | SP50N120CTK |
| EBEE Part # | E822466829 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4091 | $ 3.4091 |
| 10+ | $2.8886 | $ 28.8860 |
| 30+ | $2.5796 | $ 77.3880 |
| 90+ | $2.2677 | $ 204.0930 |
| 510+ | $2.1246 | $ 1083.5460 |
| 990+ | $2.0591 | $ 2038.5090 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Siliup SP50N120CTK | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 35mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Pd - Power Dissipation | 312W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 74A | |
| Ciss-Input Capacitance | 2.975nF | |
| Output Capacitance(Coss) | 119pF | |
| Gate Charge(Qg) | 117nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4091 | $ 3.4091 |
| 10+ | $2.8886 | $ 28.8860 |
| 30+ | $2.5796 | $ 77.3880 |
| 90+ | $2.2677 | $ 204.0930 |
| 510+ | $2.1246 | $ 1083.5460 |
| 990+ | $2.0591 | $ 2038.5090 |
