| Manufacturer | |
| Mfr. Part # | SP25N120CTF |
| EBEE Part # | E822466832 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0153 | $ 2.0153 |
| 10+ | $1.7046 | $ 17.0460 |
| 30+ | $1.5299 | $ 45.8970 |
| 90+ | $1.3313 | $ 119.8170 |
| 510+ | $1.2416 | $ 633.2160 |
| 990+ | $1.2015 | $ 1189.4850 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Siliup SP25N120CTF | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 60mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 171W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 52A | |
| Ciss-Input Capacitance | 1.92nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 87nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0153 | $ 2.0153 |
| 10+ | $1.7046 | $ 17.0460 |
| 30+ | $1.5299 | $ 45.8970 |
| 90+ | $1.3313 | $ 119.8170 |
| 510+ | $1.2416 | $ 633.2160 |
| 990+ | $1.2015 | $ 1189.4850 |
