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Sichainsemi SG1M160120J
| Manufacturer | |
| Mfr. Part # | SG1M160120J |
| EBEE Part # | E822363612 |
| Package | TO-263-7L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>244 In Stock for Fast Shipping
244 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3363 | $ 2.3363 |
| 10+ | $1.9920 | $ 19.9200 |
| 50+ | $1.7991 | $ 89.9550 |
| 100+ | $1.5776 | $ 157.7600 |
| 500+ | $1.4790 | $ 739.5000 |
| 1000+ | $1.4347 | $ 1434.7000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi SG1M160120J | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 160mΩ@15V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| Pd - Power Dissipation | 120W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 21A | |
| Ciss-Input Capacitance | 617pF | |
| Gate Charge(Qg) | 25.4nC |
Shopping Guide
Expand
244 Stock for Shipping Fast
244 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3363 | $ 2.3363 |
| 10+ | $1.9920 | $ 19.9200 |
| 50+ | $1.7991 | $ 89.9550 |
| 100+ | $1.5776 | $ 157.7600 |
| 500+ | $1.4790 | $ 739.5000 |
| 1000+ | $1.4347 | $ 1434.7000 |
Best price for more quantity?
$
