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Sichainsemi S1P14R120HSE-A


Manufacturer
Mfr. Part #
S1P14R120HSE-A
EBEE Part #
E837636089
Package
SOT-227
Customer #
Datasheet
EDA Models
ECCN
-
Description
SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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29 In Stock for Fast Shipping
29 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$18.9414$ 18.9414
30+$17.9887$ 539.6610
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSichainsemi S1P14R120HSE-A
RoHS
TypeN-Channel
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)22pF
Pd - Power Dissipation349W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))2.8V
Current - Continuous Drain(Id)120A
Ciss-Input Capacitance5.521nF
Gate Charge(Qg)230nC

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