15% off
| Manufacturer | |
| Mfr. Part # | S1P14R120HSE-A |
| EBEE Part # | E837636089 |
| Package | SOT-227 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.9414 | $ 18.9414 |
| 30+ | $17.9887 | $ 539.6610 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi S1P14R120HSE-A | |
| RoHS | ||
| Type | N-Channel | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Pd - Power Dissipation | 349W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 5.521nF | |
| Gate Charge(Qg) | 230nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.9414 | $ 18.9414 |
| 30+ | $17.9887 | $ 539.6610 |
