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Sichainsemi S1M075120D2
| Manufacturer | |
| Mfr. Part # | S1M075120D2 |
| EBEE Part # | E822363610 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>570 In Stock for Fast Shipping
570 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.8745 | $ 2.8745 |
| 10+ | $2.4859 | $ 24.8590 |
| 30+ | $2.2538 | $ 67.6140 |
| 90+ | $2.0203 | $ 181.8270 |
| 510+ | $1.9123 | $ 975.2730 |
| 990+ | $1.8638 | $ 1845.1620 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi S1M075120D2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 75mΩ@15V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF | |
| Pd - Power Dissipation | 214W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 44A | |
| Ciss-Input Capacitance | 1.02nF | |
| Gate Charge(Qg) | 40nC |
Shopping Guide
Expand
570 Stock for Shipping Fast
570 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.8745 | $ 2.8745 |
| 10+ | $2.4859 | $ 24.8590 |
| 30+ | $2.2538 | $ 67.6140 |
| 90+ | $2.0203 | $ 181.8270 |
| 510+ | $1.9123 | $ 975.2730 |
| 990+ | $1.8638 | $ 1845.1620 |
Best price for more quantity?
$
