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Sichainsemi S1M075120D1


Manufacturer
Mfr. Part #
S1M075120D1
EBEE Part #
E822363609
Package
TO-247-3L
Customer #
Datasheet
EDA Models
ECCN
None
Description
TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.1234$ 3.1234
10+$2.6700$ 26.7000
30+$2.4010$ 72.0300
90+$2.1289$ 191.6010
510+$2.0029$ 1021.4790
990+$1.9460$ 1926.5400
TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetSichainsemi S1M075120D1
RoHS
TypeN-Channel
RDS(on)75mΩ@18V
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)3.9pF
Pd - Power Dissipation214W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))2.8V
Current - Continuous Drain(Id)38A
Ciss-Input Capacitance920pF
Gate Charge(Qg)40nC

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