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Sichainsemi S1M040120D
| Manufacturer | |
| Mfr. Part # | S1M040120D |
| EBEE Part # | E822363606 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>321 In Stock for Fast Shipping
321 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7142 | $ 2.7142 |
| 10+ | $2.3066 | $ 23.0660 |
| 30+ | $2.1864 | $ 65.5920 |
| 90+ | $1.9420 | $ 174.7800 |
| 510+ | $1.8294 | $ 932.9940 |
| 990+ | $1.7774 | $ 1759.6260 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi S1M040120D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 32mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Pd - Power Dissipation | 326W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 73A | |
| Ciss-Input Capacitance | 2.159nF | |
| Gate Charge(Qg) | 76nC |
Shopping Guide
Expand
321 Stock for Shipping Fast
321 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7142 | $ 2.7142 |
| 10+ | $2.3066 | $ 23.0660 |
| 30+ | $2.1864 | $ 65.5920 |
| 90+ | $1.9420 | $ 174.7800 |
| 510+ | $1.8294 | $ 932.9940 |
| 990+ | $1.7774 | $ 1759.6260 |
Best price for more quantity?
$
