25% off
| Manufacturer | |
| Mfr. Part # | S1M032120H |
| EBEE Part # | E822363604 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.0072 | $ 5.0072 |
| 10+ | $4.3487 | $ 43.4870 |
| 30+ | $3.9463 | $ 118.3890 |
| 90+ | $3.6092 | $ 324.8280 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi S1M032120H | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 27mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF | |
| Pd - Power Dissipation | 375W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 87A | |
| Ciss-Input Capacitance | 2.7nF | |
| Gate Charge(Qg) | 96nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.0072 | $ 5.0072 |
| 10+ | $4.3487 | $ 43.4870 |
| 30+ | $3.9463 | $ 118.3890 |
| 90+ | $3.6092 | $ 324.8280 |
