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Sichainsemi S1M014120H
| Manufacturer | |
| Mfr. Part # | S1M014120H |
| EBEE Part # | E822363603 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>283 In Stock for Fast Shipping
283 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.3643 | $ 9.3643 |
| 10+ | $8.1282 | $ 81.2820 |
| 30+ | $7.3745 | $ 221.2350 |
| 90+ | $6.7422 | $ 606.7980 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Sichainsemi S1M014120H | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 14mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 625W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 152A | |
| Ciss-Input Capacitance | 5.469nF | |
| Output Capacitance(Coss) | 235pF | |
| Gate Charge(Qg) | 230nC |
Shopping Guide
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283 Stock for Shipping Fast
283 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.3643 | $ 9.3643 |
| 10+ | $8.1282 | $ 81.2820 |
| 30+ | $7.3745 | $ 221.2350 |
| 90+ | $6.7422 | $ 606.7980 |
Best price for more quantity?
$
