| Manufacturer | |
| Mfr. Part # | BSM300C12P3E301 |
| EBEE Part # | E86132527 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $414.7914 | $ 414.7914 |
| 200+ | $389.5725 | $ 77914.5000 |
| 500+ | $376.5542 | $ 188277.1000 |
| 1000+ | $370.1216 | $ 370121.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | ROHM Semicon BSM300C12P3E301 | |
| RoHS | ||
| Power Dissipation | 1360W | |
| Continuous Drain Current | 300A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $414.7914 | $ 414.7914 |
| 200+ | $389.5725 | $ 77914.5000 |
| 500+ | $376.5542 | $ 188277.1000 |
| 1000+ | $370.1216 | $ 370121.6000 |
