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ROHM Semicon BSM300C12P3E301


Manufacturer
Mfr. Part #
BSM300C12P3E301
EBEE Part #
E86132527
Package
-
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$414.7914$ 414.7914
200+$389.5725$ 77914.5000
500+$376.5542$ 188277.1000
1000+$370.1216$ 370121.6000
TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetROHM Semicon BSM300C12P3E301
RoHS
Power Dissipation1360W
Continuous Drain Current300A
Channel Type1 N-Channel
Drain Source Voltage1200V

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