| Manufacturer | |
| Mfr. Part # | BSM180C12P2E202 |
| EBEE Part # | E85955632 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $290.3541 | $ 290.3541 |
| 200+ | $272.6993 | $ 54539.8600 |
| 500+ | $263.5872 | $ 131793.6000 |
| 1000+ | $259.0841 | $ 259084.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| RoHS | ||
| Power Dissipation | 1360W | |
| Continuous Drain Current | 204A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $290.3541 | $ 290.3541 |
| 200+ | $272.6993 | $ 54539.8600 |
| 500+ | $263.5872 | $ 131793.6000 |
| 1000+ | $259.0841 | $ 259084.1000 |
