| Manufacturer | |
| Mfr. Part # | UF4C120053K4S |
| EBEE Part # | E86006292 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $29.7422 | $ 29.7422 |
| 210+ | $11.8685 | $ 2492.3850 |
| 510+ | $11.4706 | $ 5850.0060 |
| 990+ | $11.2752 | $ 11162.4480 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Qorvo UF4C120053K4S | |
| RoHS | ||
| Power Dissipation | 263W | |
| Continuous Drain Current | 34A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $29.7422 | $ 29.7422 |
| 210+ | $11.8685 | $ 2492.3850 |
| 510+ | $11.4706 | $ 5850.0060 |
| 990+ | $11.2752 | $ 11162.4480 |
